A Model of Chemical Mechanical Polishing
暂无分享,去创建一个
[1] W. Tseng,et al. Re‐examination of Pressure and Speed Dependences of Removal Rate during Chemical‐Mechanical Polishing Processes , 1997 .
[2] Frank G. Shi,et al. CHEMICAL MECHANICAL POLISHING : THRESHOLD PRESSURE AND MECHANISM , 1999 .
[3] Frank G. Shi,et al. Modeling of chemical-mechanical polishing with soft pads , 1998 .
[4] Robert E. Parks,et al. Rapidly Renewable Lap: Theory and Practice , 1998 .
[5] David J. Stein,et al. Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: I. Role of Alumina and Potassium lodate , 1999 .
[6] David J. Stein,et al. Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: II. Roles of Colloid Species and Slurry Chemistry , 1999 .
[7] D. J. Pearson,et al. Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects , 1991 .
[8] Uday Mahajan,et al. Effect of Particle Size during Tungsten Chemical Mechanical Polishing , 1999 .
[9] P. Vennereau,et al. Comparaison des cinetiques de formation de la couche passivante de WO3 sur des electrodes monocristallines de tungstene orientees (100) et (110) en milieu H2SO4 1 M , 1978 .
[10] E. Paul,et al. Application of a CMP Model to Tungsten CMP , 2001 .
[11] Ronald J. Gutmann,et al. Chemical Mechanical Planarization of Microelectronic Materials , 1997 .