Temperature variation effects in MCTs, IGBTs, and BMFETs

The switching characteristics of the non-complementary MOS-controlled thyristor (MCT) (i.e., an MCT that is gated with respect to the cathode as opposed to the anode) are examined over a temperature range of -180 to 195/spl deg/C. The forward conduction drop and dynamic performance of these MCTs are discussed and compared to the behavior of similar complementary MCTs, IGBTs (insulated gate bipolar transistors), and normally-off bipolar mode FETs (BMFETs) over the same temperature range.<<ETX>>

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