Doping effect on the dielectric property in bismuth titanate

The dielectric property complemented by the mechanical measurement (internal friction) in the doped Bi4Ti3O12 [Bi4−xLaxTi3O12 (x=0.5,0.75,1) and Bi4−y/3Ti3−yNbyO12 (y=0.015,0.03,0.06)] was systematically investigated from room temperature to 350 °C. In the plot of dielectric loss versus temperature for Bi4Ti3O12 (BiT), a relaxation peak was confirmed to be associated with the motion of the oxygen vacancy. It is found that the La doping at site A is in favor of improvement of the fatigue property, in contrast, the Nb doping at site B can mainly enhance the remanent polarization. Appropriate La doping at site A of perovskite-type unit in BiT enhances the chemical stability of oxygen vacancy by improving the height of the potential barrier for hopping and enhances the mobility of domain by the changing of domain structures. While the Nb doping at site B could induce the distortion of oxygen octahedral and reduce the oxygen vacancy concentration by a compensating effect so that it results in an enhancement of...

[1]  P. J. van Veldhoven,et al.  Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3 thin films of varying thickness: Blocking layer model , 1994 .

[2]  M. Osada,et al.  Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition , 2002 .

[3]  Y. Noguchi,et al.  Large remanent polarization of vanadium-doped Bi4Ti3O12 , 2001 .

[4]  R. Guo,et al.  Dielectric loss modes of SrTiO3 thin films deposited on different substrates , 2002 .

[5]  Jung‐Kun Lee,et al.  Correlation between internal stress and ferroelectric fatigue in Bi4−xLaxTi3O12 thin films , 2002 .

[6]  L. Brohan,et al.  X-ray photoelectron spectroscopy and high resolution electron microscopy studies of Aurivillius compounds: Bi4−xLaxTi3O12(x=0, 0.5, 0.75, 1.0, 1.5, and 2.0) , 2002 .

[7]  N. Setter,et al.  Niobium Doping and Dielectric Anomalies in Bismuth Titanate , 2004 .

[8]  J. Zhu,et al.  Why lanthanum-substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes , 2001 .

[9]  B. Park,et al.  Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12 , 1999 .

[10]  B. S. Kang,et al.  Lanthanum-substituted bismuth titanate for use in non-volatile memories , 1999, Nature.

[11]  M. Villegas,et al.  Factors Affecting the Electrical Conductivity of Donor‐Doped Bi4Ti3O12 Piezoelectric Ceramics , 1999 .

[12]  B. S. Berry,et al.  Anelastic Relaxation in Crystalline Solids , 1972 .

[13]  J. Zhu,et al.  Different domain structures and their effects on fatigue behavior in Bi3TiTaO9 and SrBi2Ta2O9 ceramics , 2003 .

[14]  Y. Kubo,et al.  Structural distortion and ferroelectric properties of SrBi2(Ta1−xNbx)2O9 , 2000 .

[15]  Seong‐Hyeon Hong,et al.  Dielectric and Electromechanical Properties of Textured Niobium‐Doped Bismuth Titanate Ceramics , 2000 .

[16]  Z. H. Bao,et al.  Study on ferroelectric and dielectric properties of niobium doped Bi4Ti3O12 ceramics and thin films prepared by PLD method , 2002 .

[17]  Ting Chen,et al.  Evidence for the weak domain wall pinning due to oxygen vacancies in SrBi2Ta2O9 from internal friction measurements , 1998 .