论文信息 - Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator - 字舞流文

Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator

Haigui Yang | H. Nakashima | H. Nakashima | K. Ikeda | Hongye Gao | S. Hata | Dong Wang | Kana Hirayama | K. Hirayama | Hong-ye Gao | Hideharu Nakashima