Highly Reliable Interface of Self-aligned CuSiN process with Low-k Sic barrier dielectric (k3.5) for 65nm node and beyond
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T. Usami | M. Sekine | K. Ueno | Y. Ajima | Y. Kakuhara | T. Ide | N. Oda | K. Chattopadhyay | E. Apen | B. van Schravendijk | Y. Yu | T. Maruyama