论文信息 - Growth and characterization of highly tensile strained Ge1−xSnx formed on relaxed InyGa1−yP buffer layers - 字舞流文

Growth and characterization of highly tensile strained Ge1−xSnx formed on relaxed InyGa1−yP buffer layers

Y. Yeo | Wei Wang | G. Liang | Jisheng Pan | S. Yoon | Zexiang Shen | W. Loke | Zheng Zhang | E. Tok | Yuan Dong | Tingting Yin | V. R. D'costa