p-Type Doping of Cubic GaN by Carbon

Successful p-type doping of cubic GaN epilayers by carbon using an e-beam evaporation source is reported. At room temperature Hall-effect measurements of the C-doped cubic GaN epilayer gave hole concentrations and hole mobilities as high as 6 x 10 17 cm -3 and 200 cm 2 /Vs, respectively. The thermal activation energy of the C-acceptor is (215 ± 10) meV. Low temperature photoluminescence spectra show a new line appearing at 3.08 eV. The emission energy increases with increasing e-beam evaporation power. This 3.08 eV line is attributed to a C related donor acceptor (D 0 A 0 ) transition.

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