Method for manufacturing metal oxide semiconductor (MOS) corners in SRAM

The invention provides a method for manufacturing metal oxide semiconductor (MOS) corners. The method includes first preliminarily extracting original corners of MOSs of the same type in an SRAM unit; then measuring read current data of the SRAM unit and conducting statistic analysis on the read current data and conducting calculation to obtain fastest read current data and slowest read current data of the SRAM unit; finally conducting optimization adjustment on parameters of the original corners according to the fastest read current data and the slowest read current data to enable the read current data obtained after original corner simulation to be consistent with the slowest read current data and the fastest read current data. The problem that the MOS corners of the SRAM unit and extracted by the traditional MOS corner manufacturing method cannot correspond to key characteristics of the SRAM unit in a one-to-one correspondence mode is solved.