论文信息 - Numerical analysis of typical STT-MTJ stacks for 1T-1R memory arrays

Numerical analysis of typical STT-MTJ stacks for 1T-1R memory arrays

This paper presents a numerical analysis of four genres of STT-MTJ stacks. A comprehensive study based on critical memory performance metrics such as TMR, JC, and write cycle shows the relative merits and demerits of each stack for embedded memory applications. The impact of stray fields in memory stability and cell density is analyzed. It shows the benefits of Synthetic AntiFerromagnet (SAF) free layer in providing immunity against thermal disturbances in scaled technology generations.

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