Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers
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Rui Q. Yang | Robert T. Hinkey | Zhaobing Tian | Dmitri Lubyshev | Yueming Qiu | Joel M. Fastenau | Matthew B. Johnson | J. Fastenau | W. K. Liu | D. Lubyshev | Z. Tian | Y. Qiu | R. Hinkey
[1] Rui Q. Yang,et al. Interband-cascade infrared photodetectors with superlattice absorbers , 2010 .
[2] B. A. Foreman,et al. Elimination of spurious solutions from eight-band k.p theory , 1997 .
[3] C. Grein,et al. TEMPERATURE DEPENDENCE OF AUGER RECOMBINATION IN A MULTILAYER NARROW-BAND-GAP SUPERLATTICE , 1998 .
[4] Jeffrey H. Warner,et al. Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes , 2006 .
[5] D. Ting,et al. A high-performance long wavelength superlattice complementary barrier infrared detector , 2009 .
[6] Manijeh Razeghi,et al. High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices , 2011 .
[7] G. Wicks,et al. nBn detector, an infrared detector with reduced dark current and higher operating temperature , 2006 .
[8] Xu,et al. Bound and quasibound states in leaky quantum wells. , 1992, Physical review. B, Condensed matter.
[9] Vaidya Nathan,et al. Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes , 2007, SPIE OPTO.
[10] Leroy L. Chang,et al. New Transport Phenomenon in a Semiconductor "Superlattice" , 1974 .
[11] M. Razeghi,et al. Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection , 2009 .
[12] Choi,et al. Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domain. , 1987, Physical review. B, Condensed matter.
[13] W. Pletschen,et al. Wannier-Stark localization in InAs/(GaIn)Sb superlattice diodes , 2001 .
[14] Philippe Christol,et al. A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement , 2010 .
[15] Rui Q. Yang,et al. Interband cascade detectors with room temperature photovoltaic operation , 2005 .
[16] K. Malloy,et al. Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate , 2010 .
[17] Gregory Belenky,et al. Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures , 2009 .