Lateral confinement InGaAsP superluminescent diode at 1.3 µm
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Ivan P. Kaminow | Gadi Eisenstein | A. G. Dentai | L. W. Stulz | G. Eisenstein | L. Stulz | I. Kaminow | A. Dentai
[1] G. Eisenstein,et al. Measurement of the modal reflectivity of an antireflection coating on a superluminescent diode , 1983, IEEE Journal of Quantum Electronics.
[2] R. T. Ku,et al. Hemispherical microlens coupling of semiconductor lasers to single-mode fiber , 1982 .
[3] I. Kaminow,et al. Performance of an improved InGaAsP ridge waveguide laser at 1.3 µm , 1981, IEEE Journal of Quantum Electronics.
[4] P. Brosson,et al. Behavior of threshold current and polarization of stimulated emission of GaAs injection lasers under uniaxial stress , 1973 .
[5] G. Olsen,et al. 1.3 µm LPE- and VPE-grown InGaAsP edge-emitting LED́s , 1981, IEEE Journal of Quantum Electronics.
[6] D. Marcuse,et al. Computer model of a superluminescent LED with lateral confinement , 1981 .
[7] C. A. Burrus,et al. A stripe-geometry double-heterostructure amplified-spontaneous-emission (superluminescent) diode , 1973 .
[8] T. P. Lee,et al. Short-cavity single-mode 1.3 μm InGaAsP lasers with evaporated high-reflectivity mirrors , 1981 .
[9] Markus-Christian Amann,et al. High-efficiency superluminescent diodes for optical-fibre transmission , 1979 .