Low Dose-Rate, High Total Dose Set-Up for Rad-Hard CMOS I/O Circuits Testing

In this paper, the planning of low dose-rate, high total dose testing campaign for I/O circuits is reported. In particular, the paper describes all development steps, starting from the rad-hard I/O circuits design and the implementation of the test-chip, which is meant to allow comparative testing between rad-hard and standard devices. The designed experimental setup permits in situ measurements, therefore the circuits behavior can be remotely monitored for very long periods. This feature enables low dose-rate testing up to very high dose.

[1]  M.R. Ahmad,et al.  Design and characterization of input and output (I/O) pads , 2004, 2004 IEEE International Conference on Semiconductor Electronics.

[2]  Sebania Libertino,et al.  Radiation Tolerance of NROM Embedded Products , 2010, IEEE Transactions on Nuclear Science.

[3]  J.A. Felix,et al.  Radiation Effects in MOS Oxides , 2008, IEEE Transactions on Nuclear Science.

[4]  J. V. Osborn,et al.  Dose-rate sensitivity of modern nMOSFETs , 2005, IEEE Transactions on Nuclear Science.

[5]  A. Johnston,et al.  Low Dose Rate Effects in Shallow Trench Isolation Regions , 2010, IEEE Transactions on Nuclear Science.

[6]  T. Oldham,et al.  Total ionizing dose effects in MOS oxides and devices , 2003 .

[7]  S. Libertino,et al.  Ionizing Radiation Effects on Non Volatile Read Only Memory Cells , 2012, IEEE Transactions on Nuclear Science.

[8]  K. E. Nielsen,et al.  Radiation Hardened By Design Digital I/O for High SEE and TID Immunity , 2009, IEEE Transactions on Nuclear Science.

[9]  Martin E. Fraeman,et al.  Harsh environments : space radiation environment, effects, and mitigation , 2008 .

[10]  H.J. Barnaby,et al.  Total-Ionizing-Dose Effects in Modern CMOS Technologies , 2006, IEEE Transactions on Nuclear Science.

[11]  Calogero Pace,et al.  Gamma-ray irradiation tests of CMOS sensors used in imaging techniques , 2014 .