Direct and quantitative understanding of the non-Ohmic contact resistance in organic and oxide thin-film transistors

Abstract We explore the device physics of thin film transistors (TFTs) with non-Ohmic contacts and develop a simple and fast method for evaluating the contact properties TFTs through output characteristics. Using one single output scan, the quantitative relationship between contact resistances and drain voltage were evaluated, revealing the property of interfacial injection at non-Ohmic contacts. This is demonstrated and validated in both TFT simulations and experiments employing inorganic and organic TFTs. The approach can be applied to general TFTs with arbitrary materials and configurations conveniently and enables faster and improved understanding of TFT operation and device physics.

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