Physics model of memristor devices with varying active materials
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[1] J. Yang,et al. Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.
[2] Dejun Fu,et al. Accelerated Publication: Memristive behavior of ZnO/NiO stacked heterostructure , 2013 .
[3] L. Chua. Memristor-The missing circuit element , 1971 .
[4] J. Yang,et al. Switching dynamics in titanium dioxide memristive devices , 2009 .
[5] Chang Jung Kim,et al. Physical electro-thermal model of resistive switching in bi-layered resistance-change memory , 2013, Scientific Reports.
[6] R. Williams,et al. Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. , 2009, Small.
[7] H. Kattelus,et al. Electrical Properties of Tantalum Based Composite Oxide Films , 1992 .
[8] James A. Bain,et al. Computational investigations into the operating window for memristive devices based on homogeneous ionic motion , 2011 .
[9] A. Ayatollahi,et al. Implementation of biologically plausible spiking neural network models on the memristor crossbar-based CMOS/nano circuits , 2009, 2009 European Conference on Circuit Theory and Design.
[10] Seungjun Kim,et al. Flexible memristive memory array on plastic substrates. , 2011, Nano letters.
[11] R. Williams,et al. Exponential ionic drift: fast switching and low volatility of thin-film memristors , 2009 .
[12] Matthew D. Pickett,et al. Accelerated Publication: Memristor structures for high scalability: Non-linear and symmetric devices utilizing fabrication friendly materials and processes , 2013 .
[13] J. Lue,et al. Measurement of the dielectric constants of zinc metallic nanoparticles at various frequencies , 2012 .
[14] Jianlin Liu,et al. Multimode Resistive Switching in Single ZnO Nanoisland System , 2013, Scientific Reports.
[15] Baker Mohammad,et al. Modeling and device parameter design to improve reset time in binary-oxide memristors , 2014 .
[16] Kyung Hyun Choi,et al. Fabrication of printed memory device having zinc-oxide active nano-layer and investigation of resistive switching , 2013 .
[17] Tae Geun Kim,et al. Improved resistive switching properties by nitrogen doping in tungsten oxide thin films , 2015 .
[18] C. Toumazou,et al. A Versatile Memristor Model With Nonlinear Dopant Kinetics , 2011, IEEE Transactions on Electron Devices.
[19] Shamik Das,et al. Switching-time analysis of binary-oxide memristors via a nonlinear model , 2012 .