论文信息 - Monolithic high-speed CMOS-photoreceiver

Monolithic high-speed CMOS-photoreceiver

Results of optoelectronic integrated CMOS receivers for applications in optical data transmission and in optical interconnects are presented. The rise and fall times of the integrated p-i-n photodiodes (PDs) are 0.19 and 0.24 ns, respectively, corresponding to -3 dB bandwidths in excess of 1.4 GHz. These PDs combine this high speed with a high quantum efficiency. Rise and fall times of 0.53 and 0.69 ns, respectively, are obtained for CMOS optoelectronic integrated circuits (OEICs) with integrated p-i-n PD's. These OEICs in 1.0 /spl mu/m CMOS technology handle a data rate of 622 Mb/s with a single-supply voltage of 3.3 V.

T. Heide | A. Ghazi | H. Zimmermann

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