Do hot electrons produce excess noise?

The open question whether excess noise is due to hot electrons or not is addressed for the first time by solving the Langevin Boltzmann equation. Not only is the bulk case analyzed but also devices. In contrast to the well-known Monte Carlo method this new approach allows the investigation of the spatial origin of the terminal current noise. It is shown, that excess noise is mainly due to cold or warm electrons, whereas the contribution of hot electrons in a velocity-saturation region is negligible.

[1]  R. W. Kelsall,et al.  The Monte Carlo method for semiconductor device simulation , 1995 .

[2]  Raúl Rengel,et al.  Influence of 2D electrostatic effects on the high-frequency noise behavior of sub-100-nm scaled MOSFETs , 2004, SPIE International Symposium on Fluctuations and Noise.

[3]  F. M. Klaassen,et al.  Thermal noise of MOS transistors , 1967 .

[4]  M. Tiebout,et al.  A new model for thermal channel noise of deep submicron MOSFETs and its application in RF-CMOS design , 2000 .

[5]  C. Jungemann,et al.  Hydrodynamic simulation of RF noise in deep-submicron MOSFETs , 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..

[6]  B. Meinerzhagen,et al.  Hydrodynamic equations for semiconductors with nonparabolic band structure , 1991 .

[7]  Aaas News,et al.  Book Reviews , 1893, Buffalo Medical and Surgical Journal.

[8]  Robert W. Dutton,et al.  An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs , 2000 .

[9]  C. Jungemann,et al.  A Legendre Polynomial Solver for the Langevin Boltzmann Equation , 2004, 2004 Abstracts 10th International Workshop on Computational Electronics.

[10]  Sh. Kogan,et al.  Electronic noise and fluctuations in solids , 1996 .

[11]  Carlo Jacoboni,et al.  Diffusion coefficient of electrons in silicon , 1981 .

[12]  R. Havens,et al.  Noise modeling for RF CMOS circuit simulation , 2003 .

[13]  Christoph Jungemann,et al.  Hierarchical Device Simulation , 2003 .

[14]  Christoph Jungemann,et al.  Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results , 2002 .