Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects

In an effort to investigate the particulars of their stability, In18.5%Al81.5%N/GaN HFETs were subjected to on-state electrical stress for intervals totaling up to 20 hours. The current gain cutoff frequency fT showed a constant increase after each incremental stress, which was consistent with the decreased gate lag and the decreased phase noise. Extraction of small-signal circuit parameters demonstrated that the increase of fT is due to a decrease in the gate-source capacitance (Cgs) and gate-drain capacitance (Cgd) as well as the increased microwave transconductance (gm). All these behaviors are consistent with the diminishing of the gate extension (“virtual gate”) around the gate area.

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