论文信息 - A highly stable SRAM memory cell with top-gated P-N drain poly-Si TFTs for 1.5 V operation - 字舞流文

A highly stable SRAM memory cell with top-gated P-N drain poly-Si TFTs for 1.5 V operation

K. Noda | S. Kumashiro | T. Shimizu | H. Ohkubo | T. Uchida | F. Hayashi | T. Takahashi | S. Horiba | N. Sugawara | T. Takahashi