论文信息 - A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs - 字舞流文

A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs

B. Zhang | Wanjun Chen | Ximing Chen | Xiaochuan Deng | Chengzhan Li | Y. Zhang | T. Dai | Y. Guo | Bo Zhang