Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode

The influence of temperature on the intensity of light emitted by as well as the carrier life time τ of a standard AlGaAs based light emitting diode has been investigated in the temperature range from 345 to 136 K. The open-circuit voltage decay (OCVD) technique has been used for measured the carrier lifetime. Our experimental results reveal a 16% average increase in intensity and a 163.482–19.765 ns variation in carrier lifetime in the above temperature range. Further, theoretical and experimental analysis show that for negligible carrier density the intensity is inversely proportional to carrier lifetime for this sample.

[1]  Temperature dependence of current—voltage characteristics of Au/n-GaAs epitaxial Schottky diode , 2000 .

[2]  Ya-Ju Lee,et al.  Determination of Junction Temperature in InGaN and AlGaInP Light-Emitting Diodes , 2010, IEEE Journal of Quantum Electronics.

[3]  Pavel Hazdra,et al.  Open circuit voltage decay lifetime of ion irradiated devices , 1999 .

[4]  Y. B. Acharya,et al.  Temperature characteristics of the device constant (n) of a light emitting diode , 1999 .

[5]  I. Uslu,et al.  Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer , 2011 .

[6]  Gao Wei,et al.  Characteristics of high power LEDs at high and low temperature , 2011 .

[7]  A. N. Basu,et al.  Characterisation of the photodetector and light emitting diode at above liquid nitrogen temperature , 2000 .

[8]  P. K. Rao,et al.  Temperature dependence of current-voltage (I-V) characteristics of Pt/Au Schottky contacts on n-type GaN , 2008 .

[9]  J. Mahan,et al.  Measurement of minority carrier lifetime in solar cells from photo-induced open-circuit voltage decay , 1979, IEEE Transactions on Electron Devices.

[10]  R. Dwivedi,et al.  Measurement of minority carrier lifetime of solar cells using surface voltage and current transients , 1990 .

[11]  APPLICATION OF OPEN CIRCUIT VOLTAGE DECAY TO THE CHARACTERIZATION OF EPITAXIAL LAYER , 2004 .

[12]  King Jet Tseng,et al.  Modified charge-control equation for simulation of diode reverse recovery , 1996 .

[13]  T. Pisarkiewicz.  Photodecay method in investigation of materials and photovoltaic structures , 2004 .

[14]  J. Bye,et al.  Room temperature minority carrier lifetime and efficiency of p-type GaAs1—xPx , 1976 .

[15]  D. K. Bhattacharya,et al.  Determination of recombination center position from the temperature dependence of minority carrier lifetime in the base region of p‐n junction solar cells , 1985 .

[16]  N. Kavasoğlu,et al.  The circuit point of view of the temperature dependent open circuit voltage decay of the solar cell , 2009 .

[17]  J. Bergman,et al.  Temperature dependence of the minority carrier lifetime in GaAs/AlGaAs double heterostructures , 1995 .

[18]  J. D. Arora,et al.  Temperature dependence of minority carrier lifetime in single‐crystal and polycrystalline Si solar cells , 1981 .

[19]  P. Wójcik,et al.  Influence of junction parameters on the open circuit voltage decay in solar cells , 2004 .