论文信息 - MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown [MOS devices]

MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown [MOS devices]

Gate oxide breakdown in MOS devices is related to the generation of defects in the oxide bulk. In this paper, we investigate the role of MVHR in SHE (substrate hot electron) and SHH (substrate hot hole) stress, BTI stress and oxide breakdown. We report that the MVHR mechanism, even if it is not the prevalent mechanism, takes part in the interface states generation under BTI stress. Finally, we demonstrate that this mechanism is the process which induces the oxide breakdown.

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