Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
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H. Yokoyama | T. Makimōto | Chengxin Wang | M. Hiroki | Takashi Kobayashi | N. Watanabe | N. Maeda | T. Enoki | T. Enoki | T. Makimoto