Copper-dielectric cap interface with enhanced reliability for 45nm technology and beyond
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Frank Feustel | Oliver Aubel | Ulrich Mayer | F. Feustel | O. Aubel | C. Hennesthal | Christian Hennesthal | Joerg Hohage | Matthias Lehr | J. Hohage | M. Lehr | U. Mayer
[1] Kenichi Takeda,et al. Effect of NH/sub 3/-plasma treatment and CMP modification on TDDB improvement in Cu metallization , 2001 .
[2] Robert Rosenberg,et al. Reduced electromigration of Cu wires by surface coating , 2002 .
[3] Karen Maex,et al. Low dielectric constant materials for microelectronics , 2003 .
[4] Matthias Lehr,et al. A copper-dielectric cap interface with high resistance to electromigration for high performance semiconductor devices , 2009 .