论文信息 - A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratio

A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratio

Performance results for a normally on, electroabsorptive, surface-normal Fabry-Perot reflection modulator are presented. The device employs a cavity with a 100 AA GaAs/100 AA Al/sub 0.3/Ga/sub 0.7/As multiple quantum well and top and bottom quarter-wave mirrors with 4 and 19.5 periods, respectively. Very low values of off-state reflectance were measured, giving a maximum contrast ratio >1000 (30 dB) and a maximum reflectance difference of 64.3%. The contrast ratio is, to the authors' knowledge, the largest reported to date.<<ETX>>

[1] W. Wiegmann,et al. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy , 1984 .

[2] L. Coldren,et al. Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry-Perot structures , 1990 .

[3] Pa Buffat,et al. Characterization of GaAs/(GaAs)n(AlAs)m surface‐emitting laser structures through reflectivity and high‐resolution electron microscopy measurements , 1989 .

[4] R.H. Yan,et al. Extremely low-voltage Fabry-Perot reflection modulators , 1990, IEEE Photonics Technology Letters.

[5] L. Chirovsky,et al. Role of electrorefraction in quantum‐well Fabry–Perot modulators , 1992 .

[6] Larry A. Coldren,et al. Surface-normal electroabsorption reflection modulators using asymmetric Fabry-Perot structures , 1991 .

[7] L. Coldren,et al. Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrors , 1989, IEEE Photonics Technology Letters.

[8] C. C. Button,et al. Low-voltage multiple quantum well reflection modulator with on:off ratio >100:1 , 1989 .