Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling

Evaluation of RTN trap effect and amount of interface traps before and after different P/E cycles. Full and macaroni channel devices show similar interface degradation trend after P/E cycle endurance test and both of them are RTN dominated by band#2.Display Omitted We investigate defects locate at different parts of 3D SONOS devices.After stress, the NIT increases in the same way for different types of channel.RTN is dominated by traps near the Fermi level.No change in RTN trap properties is observed after endurance stress.Degradation of tunnel oxide shows similar trend for full and macaroni device. We comprehensively investigate defects in 3-D SONOS devices (macaroni vs. full channel) in fresh state and after program/erase cycling endurance stress with three trap characterization techniques: charge pumping for SiO2/poly-Si interface traps assessment, fast random telegraph noise measurement for traps in the poly-Si channel, and trap spectroscopy by charge injection and sensing for assessment of traps in the tunnel oxide. The number of interface traps after endurance stress increases in the same way for both full and macaroni channels. For all devices and channel processes, RTN is dominated by traps near the Fermi level. A small improvement of near-interface poly-Si traps is detected for macaroni. No change in RTN trap properties is observed after endurance stress. Trap generation in the tunnel oxide after endurance stress follows similar trend in both channel type.