Ultra Thin Depleted Silicon On Insulator MOSFET : a simulati on based on COMSOL Multiphysics

We use the MOS transistor model from COMSOL [1] as a template t o develop our own UT-FD-SOI-MOSFET with an ultra thin geometry(Channel thic kness = 10nm). SOIMOSFETs are used to reduce short channel effect problems in a ctual MOSFET structures and to enable further miniaturization. Our model shows a lin ear dependence of the front Threshold Voltage with the Back Gate Voltage, which has been r ported experimentally by [2] and theoretically by [3].