Design considerations for sub-0.35 mu m buried channel P-MOSFET devices

Based on simulation and experimental work it is shown that the most important parameters are the LDD dose and the p/sup +/ source/drain junction depth, not the buried junction channel. It is also shown that buried channels can readily be scaled down to 0.2 mu m geometries by adjusting the source/drain construction. The design considerations presented are confirmed by fabricated 0.25- mu m-gate (L/sub eff/ approximately=0.19 mu m) buried p MOSFETs with off-leakage current below 1 pA/ mu m at V/sub G/=0 V, V/sub DS/=-3.3 V. In addition, it is shown that buried channels can readily be scaled down to 0.2- mu m geometries by adjusting the source/drain parameters while maintaining a reasonably high back-end thermal budget.<<ETX>>