The effects of 12 MeV electron irradiation on the electrical characteristics of the Au/Aniline blue/p-Si/Al device

Abstract An Au/Aniline blue (AB)/p-Si/Al structure has been fabricated and then the effect of electron irradiation (12 MeV electron energy and 5 × 1012 e− cm−2 fluence) on the contact parameters of the device has been analysed by using the current–voltage (I–V), capacitance–voltage (C–V), and conductance–voltage (G/w–V) measurements, at room temperature. Since the organic layer creates a physical barrier between the metal and the semiconductor, it has been seen that the AB layer causes an increase in the effective barrier height of the device. Cheung functions, Norde model and conductance method have been used in order to determine the diode parameters. The values of the ideality factor, barrier height and series resistance increased after the electron irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of electron irradiation.

[1]  M. Saglam,et al.  Current–voltage and capacitance–voltage characteristics of polypyrrole/p-InP structure , 2005 .

[2]  Manjunatha Pattabi,et al.  Effect of temperature and electron irradiation on the I–V characteristics of Au/CdTe Schottky diodes , 2007 .

[3]  S. Altindal,et al.  The effect of 60Co (γ-ray) irradiation on the electrical characteristics of Au/SnO2/n-Si (MIS) structures , 2008 .

[4]  H. Norde.  A modified forward I‐V plot for Schottky diodes with high series resistance , 1979 .

[5]  Werner,et al.  Interface-state measurements at Schottky contacts: A new admittance technique. , 1986, Physical review letters.

[6]  A. Turut,et al.  Characterization of capacitance–frequency features of Sn/polypyrrole/n-Si structure as a function of temperature , 2005 .

[7]  Ş. Karataş,et al.  Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101∕n-Si and Sn/rhodamine-101∕p-Si Schottky barrier diodes , 2006 .

[8]  V. Ganesan,et al.  Electronic excitation induced mass transport on 200 MeV 107Ag+14 ion irradiated Si surface , 2000 .

[9]  E. H. Nicollian,et al.  The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique , 1967 .

[10]  Irradiation effects on the C–V and G/ω–V characteristics of Sn/p-Si (MS) structures , 2009 .

[11]  Ş. Karataş,et al.  The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy , 2004 .

[12]  F. D. Auret,et al.  The influence of high-energy alpha-particle irradiation on the spectral and defect properties of a Si photovoltaic detector , 1999 .

[13]  A. Barakat,et al.  Preparation, characterization, and electrical conductivity of polypyrrole composite films , 2004 .

[14]  E. Simoen,et al.  Radiation Effects in Advanced Semiconductor Materials and Devices , 2002 .

[15]  Hyung-Ho Park,et al.  Surface preparation and effective contact formation for GaAs surface , 2002 .

[16]  E. H. Rhoderick,et al.  Metal–Semiconductor Contacts , 1979 .

[17]  Orly Yadid-Pecht,et al.  Photoresponse analysis and pixel shape optimization for CMOS active pixel sensors , 2003 .

[18]  Takakazu Yamamoto,et al.  Electrochemical and electric properties of vacuum-deposited poly(arylene)s: electrochemical activity, diode, and electroluminescence , 1992 .

[19]  Barrier modification of Au/n-GaAs Schottky diode by swift heavy ion irradiation , 2007 .

[20]  G. Umana-Membreno,et al.  /sup 60/Co gamma irradiation effects on n-GaN Schottky diodes , 2003 .

[21]  A. Turut,et al.  Effect of 6MeV electron irradiation on electrical characteristics of the Au/n-Si/Al Schottky diode , 2008 .

[22]  N. Cheung,et al.  Extraction of Schottky diode parameters from forward current-voltage characteristics , 1986 .

[23]  B. Raychaudhuri,et al.  Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes , 1993 .

[24]  P. Stampfli.  Electronic excitation and structural stability of solids , 1996 .

[25]  A. Turut,et al.  The effects of the temperature on the some parameters obtained from current–voltage and capacitance–voltage characteristics of polypyrrole/n-Si structure , 2005 .

[26]  A. Goetzberger,et al.  MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS , 1965 .

[27]  B. Akkal,et al.  Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency , 2000 .

[28]  A. Deneuville.  Characterization of the interface states at a Ag/Si interface from capacitance measurements , 1974 .

[29]  R. M. Radwan,et al.  Effect of electron beam irradiation on the conduction phenomena of unplasticized PVC/PVA copolymer , 2004 .

[30]  M. M. El-Nahass,et al.  Photovoltaic properties of NiPc/p-Si (organic/inorganic) heterojunctions , 2005 .

[31]  Smith,et al.  Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers. , 1996, Physical review. B, Condensed matter.

[32]  P. E. Laibinis,et al.  Electrical properties of covalently linked silicon/polypyrrole junctions , 1999 .

[33]  A. Mo.  Influence of thin interfacial silicon oxide layers on the Schottky-barrier behavior of Ti on Si(100). , 1989 .

[34]  A. Turut,et al.  Electron irradiation effects on the organic-on-inorganic silicon Schottky structure , 2008 .

[35]  G. K. Reeves,et al.  Interface states capacitance in Schottky contacts—A modified Schottky Capacitance Spectroscopy method , 1995 .

[36]  Ş. Aydoğan,et al.  Temperature dependence of reverse bias capacitance–voltage characteristics of Sn/p-GaTe Schottky diodes , 2004 .

[37]  K. Potje-Kamloth,et al.  The influence of thickness and preparation temperature of doped polypyrrole films on the electrical and chemical sensing properties of polypyrrole/gold Schottky barrier diodes , 2000 .

[38]  I. Musa,et al.  Electrical properties of polymer/Si heterojunctions , 1999 .

[39]  D. Evans,et al.  Modification of GaAs Schottky diodes by thin organic interlayers , 2005 .