UHV-compatible spectroscopic scanning Kelvin probe for surface analysis

[1]  I. Baikie,et al.  Characterization of Oxides and Thin Films , 1993 .

[2]  P. J. Estrup,et al.  Noise and the Kelvin method , 1991 .

[3]  I. D. Baikie,et al.  Analysis of stray capacitance in the Kelvin method , 1991 .

[4]  Koch,et al.  Successive oxidation stages of adatoms on the Si(111)7 x 7 surface observed with scanning tunneling microscopy and spectroscopy. , 1990, Physical review. B, Condensed matter.

[5]  Phaedon Avouris,et al.  Atom-resolved surface chemistry using the scanning tunneling microscope , 1990 .

[6]  I. Baikie.  Very Low Pressure Oxidation of Si and Ge Surfaces , 1990 .

[7]  Umbach,et al.  Initial stages of oxygen adsorption on Si(111). II. The molecular precursor. , 1989, Physical review. B, Condensed matter.

[8]  I. Baikie,et al.  Automatic kelvin probe compatible with ultrahigh vacuum , 1989 .

[9]  Avouris,et al.  Atom-resolved surface chemistry studied by scanning tunneling microscopy and spectroscopy. , 1989, Physical review. B, Condensed matter.

[10]  Shayegan,et al.  Observation of a metastable precursor for adsorption of oxygen on Si(111) and the activation energy for chemisorption. , 1988, Physical review. B, Condensed matter.

[11]  B. Bigeard,et al.  Étude de l'adsorption de l'oxygène sur ruban de rhénium par mesure des variations du travail d'extraction électronique , 1974 .

[12]  J. T. Law.  Surface Electrical Changes Caused by the Adsorption of Hydrogen and Oxygen on Silicon , 1961 .

[13]  W. A. Zisman,et al.  A NEW METHOD OF MEASURING CONTACT POTENTIAL DIFFERENCES IN METALS , 1932 .