Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots

We measured the transient temperature-dependent carrier population in the confined states of self-assembled In0.4Ga0.6As quantum dots as well as those of the surrounding wetting layer and barrier region using differential transmission spectroscopy. Results show directly that thermal reemission and nonradiative recombination contribute significantly to the dynamics above 100 K. We offer results of an ensemble Monte Carlo simulation to explain the contribution of these thermally activated processes.

[1]  Diana L. Huffaker,et al.  Quantum dimensionality, entropy, and the modulation response of quantum dot lasers , 2000 .

[2]  Weidong Yang,et al.  Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots , 1997 .

[3]  Jasprit Singh,et al.  Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures , 1997 .

[4]  Mohamed Henini,et al.  Carrier thermal escape and retrapping in self-assembled quantum dots , 1999 .

[5]  Jasprit Singh,et al.  Rapid carrier relaxation in In 0.4 Ga 0.6 A s / G a A s quantum dots characterized by differential transmission spectroscopy , 1998 .

[6]  Hiroshi Ishikawa,et al.  Temperature dependent lasing characteristics of multi-stacked quantum dot lasers , 1997 .

[7]  Jasprit Singh,et al.  Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots , 1998 .

[8]  J. Laskar,et al.  In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties , 1999 .

[9]  Diana L. Huffaker,et al.  Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots , 2001 .

[10]  P. Bhattacharya,et al.  Observation of phonon bottleneck in quantum dot electronic relaxation. , 2001, Physical review letters.

[11]  O. Shchekin,et al.  Discrete energy level separation and the threshold temperature dependence of quantum dot lasers , 2000 .

[12]  Diana L. Huffaker,et al.  Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots , 2000 .

[13]  G. Abstreiter,et al.  Carrier capture into InAs/GaAs quantum dots via multiple optical phonon emission , 2001 .