Topological insulator Bi2Se3 nanowire/Si heterostructure photodetectors with ultrahigh responsivity and broadband response

Owing to the unique properties of nontrivial Dirac cones on the surface and a narrow bandgap in the bulk, topological insulators have become one of the most promising candidates in the construction of novel electronic and photonic devices. Herein, single-crystalline topological insulators of Bi2Se3 nanowires (NWs) were synthesized via a Au-catalyzed vapor–liquid–solid (VLS) method. Through the transfer of the Bi2Se3 NWs onto a pre-patterned SiO2/Si substrate, Bi2Se3 NW/Si heterostructure photodetectors were fabricated for the first time. The photodetectors exhibited excellent detection performance with an optimized responsivity of ∼103 A W−1 and a broad spectral range from 380 to 1310 nm. The responsivity is significantly better than previous reports and represents the highest value for topological insulator-based photodetectors. The high-crystal quality of the Bi2Se3 NWs, along with the high built-in electric field at the heterostructure interface, is responsible for the excellent performance of the Bi2Se3 NW/Si heterostructure photodetectors. Given the ultrahigh light responsivity, high-speed and broadband response properties, the Bi2Se3 NW/Si heterostructure will have important applications in new-generation optoelectronic devices.

[1]  Xiao-Liang Qi,et al.  Aharonov-Bohm interference in topological insulator nanoribbons. , 2009, Nature materials.

[2]  Hong Bin Zhang,et al.  Magnetoresistance Switch Effect of a Sn‐Doped Bi2Te3 Topological Insulator , 2012, Advanced materials.

[3]  E. Pop,et al.  Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions , 2013 .

[4]  Yang Jiang,et al.  Fabrication of Ultrathin Bi2 S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors. , 2015, Small.

[5]  Dapeng Yu,et al.  Topological surface state enhanced photothermoelectric effect in Bi2Se3 nanoribbons. , 2014, Nano letters.

[6]  Ziran Zhao,et al.  Ultra-broadband photodetector for the visible to terahertz range by self-assembling reduced graphene oxide-silicon nanowire array heterojunctions. , 2014, Small.

[7]  Yongqiang Yu,et al.  Optoelectronic characteristics of a near infrared light photodetector based on a topological insulator Sb2Te3 film , 2015 .

[8]  Yugang Zhang,et al.  Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons , 2012 .

[9]  Jiang Wu,et al.  Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface , 2012, 1212.6807.

[10]  T. D. Senguttuvan,et al.  High performance broadband photodetector using fabricated nanowires of bismuth selenide , 2016, Scientific Reports.

[11]  Caiyun Chen,et al.  Broadband photodetectors based on graphene-Bi2Te3 heterostructure. , 2015, ACS nano.

[12]  Charles M. Lieber,et al.  Growth of nanowire superlattice structures for nanoscale photonics and electronics , 2002, Nature.

[13]  Shengbai Zhang,et al.  Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates. , 2015, Nano letters.

[14]  P. Jarillo-Herrero,et al.  Control over topological insulator photocurrents with light polarization. , 2011, Nature nanotechnology.

[15]  Xin He,et al.  Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid , 2014, Scientific Reports.

[16]  Kang L. Wang,et al.  High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications , 2013 .

[17]  Chao Xie,et al.  Graphene Transparent Conductive Electrodes for Highly Efficient Silicon Nanostructures-Based Hybrid Heterojunction Solar Cells , 2013 .

[18]  L. Luo,et al.  Ultrahigh Mobility of p‐Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices , 2013 .

[19]  Jing Wang,et al.  Topological insulators for high-performance terahertz to infrared applications , 2010, 1101.3583.

[20]  Y. Min,et al.  Quick, controlled synthesis of ultrathin Bi2Se3 nanodiscs and nanosheets. , 2012, Journal of the American Chemical Society.

[21]  Guowei Yang,et al.  Promoting Photosensitivity and Detectivity of the Bi/Si Heterojunction Photodetector by Inserting a WS2 Layer. , 2015, ACS applied materials & interfaces.

[22]  Guowei Yang,et al.  Ultra-broadband and high response of the Bi2Te3-Si heterojunction and its application as a photodetector at room temperature in harsh working environments. , 2015, Nanoscale.

[23]  M. Tang,et al.  Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics , 2015, Advanced materials.

[24]  Federico Capasso,et al.  Broadband ZnO single-nanowire light-emitting diode. , 2006, Nano letters.

[25]  Zhi-Xun Shen,et al.  Topological insulator nanowires and nanoribbons. , 2009, Nano letters.

[26]  R. Cava,et al.  Observation of a large-gap topological-insulator class with a single Dirac cone on the surface , 2009 .

[27]  Li Wang,et al.  Near‐Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction , 2014 .

[28]  M. Fuhrer,et al.  Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3 , 2012, 1205.4488.

[29]  Zhengqian Luo,et al.  Preparation of Few-Layer Bismuth Selenide by Liquid-Phase-Exfoliation and Its Optical Absorption Properties , 2014, Scientific Reports.

[30]  Y. Kawazoe,et al.  Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 nanodevices. , 2015, Nano letters.

[31]  Jiansheng Jie,et al.  MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–Near Infrared Photodetectors , 2015 .

[32]  J. Stake,et al.  Graphene-Si Schottky IR Detector , 2013, IEEE Journal of Quantum Electronics.

[33]  Z. Jiang,et al.  Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry , 2013, Nature Communications.

[34]  Han Hu,et al.  Monolayer graphene/germanium Schottky junction as high-performance self-driven infrared light photodetector. , 2013, ACS applied materials & interfaces.

[35]  Q. Xue,et al.  Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator. , 2011, Physical review letters.

[36]  W. Dang,et al.  Topological insulator nanostructures for near-infrared transparent flexible electrodes. , 2012, Nature chemistry.

[37]  Shui-Tong Lee,et al.  MoO3 Nanodots Decorated CdS Nanoribbons for High-Performance, Homojunction Photovoltaic Devices on Flexible Substrates. , 2015, Nano letters.

[38]  Yong Wang,et al.  Manipulating surface states in topological insulator nanoribbons. , 2011, Nature nanotechnology.

[39]  Xi Dai,et al.  Crossover of the three-dimensional topological insulator Bi 2 Se 3 to the two-dimensional limit , 2010 .

[40]  Jiansheng Jie,et al.  Flexible graphene/silicon heterojunction solar cells , 2015 .

[41]  Ke Xu,et al.  High-responsivity graphene/silicon-heterostructure waveguide photodetectors , 2013, Nature Photonics.

[42]  Yong Ding,et al.  Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. , 2008, Nature materials.

[43]  Shu-wei Li,et al.  Anomalous Photoelectric Effect of a Polycrystalline Topological Insulator Film , 2014, Scientific Reports.

[44]  Swastik Kar,et al.  Tunable graphene-silicon heterojunctions for ultrasensitive photodetection. , 2013, Nano letters.

[45]  Chang-Hua Liu,et al.  Graphene photodetectors with ultra-broadband and high responsivity at room temperature. , 2014, Nature nanotechnology.

[46]  F. Meier,et al.  A tunable topological insulator in the spin helical Dirac transport regime , 2009, Nature.

[47]  Xi Dai,et al.  Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface , 2009 .

[48]  J. Kong,et al.  Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells. , 2015, Nano letters.