Design of ultra low-power RF oscillators based on the inversion coefficient methodology using BSIM6 model

This paper presents a fast and accurate way to design and optimize LC oscillators using the inversion coefficient IC. This methodology consists of four steps: linear analysis, nonlinear analysis, phase noise analysis, and optimization using a figure of merit. For given amplitude of oscillation and frequency, we are able to determine all the design variables in order to get the best trade-off between current consumption and phase noise. This methodology is demonstrated through the design of Pierce and cross-coupled oscillators and has been verified with BSIM6 metal oxide semiconductor field effect transistor compact model using the parameters of a commercial advanced 40nm complementary metal oxide semiconductor process. Copyright © 2015 John Wiley & Sons, Ltd.

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