Power device stacking using surface bump connections

This work presents a novel integration approach for silicon power devices. Considering the very widespread half-bridge interconnection of IGBTs and anti-parallel freewheeling diodes, the first prototype development and testing of a vertically integrated switch is described. This original solution is enabled by the use of surface bumps as a replacement of bond-wires and it opens up new ways for optimum volume exploitation in power system design and also brings along double sided cooling capability and reduced stray inductance.