Memory cell and memory device for using the same

The present invention relates to a memory cell and the memory device using it, and more specifically, to a non-volatile non-destructive read-type random access memory cell and using the same memory device with a ferroelectric transistor as a storage means. The present invention relates to a memory cell, a ferroelectric transistor is applied with a reference voltage to the drain; In response to a scan signal to the first switch connected to the source of the ferroelectric transistor in the first line; And in response to a scan signal and a second switch for connecting the gate of the ferroelectric transistor in the second line. According to the invention, it is possible to provide a memory device of random access is possible, and operates in a non-destructive type at the time of reading operation.