Recent advances in the performance and reliability of InGaAsP LED's for lightwave communication systems

High radiance LED's are being exploited in lightwave applications where their low cost, wide temperature range of operation, and outstanding reliability outweigh the power and modulation advantages of injection laser diodes. Development activity and commercial offerings of LED's have been rapidly moving toward InGaAsP LED's to take advantage of the low attenuation and chromatic dispersion minimum at the 1.3-µm emission wavelength. This paper reviews recent advances in the performance, reliability, and system application of InGaAsP LED's.

[1]  Mitsuo Fukuda,et al.  Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation , 1981 .

[2]  H. Takanashi,et al.  Growth mechanism of <100> dark-line defects in high radiance GaAlAs LED's , 1978, 1978 International Electron Devices Meeting.

[3]  A. Dentai,et al.  Power and modulation bandwidth of gaAs-AlGaAs high-radiance LED's for optical communication systems , 1978 .

[4]  O. Wada,et al.  Control of Zn Doping for Growth of InP pn Junction by Liquid Phase Epitaxy , 1980 .

[6]  J. Heinen,et al.  Frequency response of GaAlAs light-emitting diodes , 1976, IEEE Transactions on Electron Devices.

[7]  D. Botez,et al.  Comparison of surface- and edge-emitting LED's for use in fiber-optical communications , 1979, IEEE Transactions on Electron Devices.

[8]  R. Dawson LED bandwidth improvement by bipolar pulsing , 1980 .

[9]  Masahiro Asada,et al.  The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-y Lasers Related to Intervalence Band Absorption , 1980 .

[10]  J. Zucker Closed‐form calculation of the transient behavior of (Al,Ga)As double‐heterojunction LED’s , 1978 .

[12]  N. Tamari Tin doping of active region in InGaAsP/InP lasers , 1982 .

[13]  M. Takusagawa,et al.  Influences of interfacial recombination on oscillation characteristics of InGaAsP/InP DH lasers , 1980 .

[14]  A. Carter,et al.  Radiance saturation in small-area GaInAsP/InP and GaAlAs/GaAs LED's , 1981, IEEE Transactions on Electron Devices.

[15]  K H Yang,et al.  Calculation of coupling losses between light emitting diodes and low-loss optical fibers. , 1975, Applied optics.

[16]  P. Petroff,et al.  Defect structure introduced during operation of heterojunction GaAs lasers , 1973 .

[17]  M. Abe,et al.  Coupling of spherical‐surfaced LED and spherical‐ended fiber , 1980 .

[18]  J. Heinen,et al.  Light-emitting diodes with a modulation bandwidth of more than 1 GHz , 1976 .

[19]  O. Wada,et al.  Direct observation of electron leakage in InGaAsP/InP double heterostructure , 1982 .

[20]  Lionel C. Kimerling,et al.  Observation of recombination-enhanced defect reactions in semiconductors , 1974 .

[21]  V. G. Keramidas,et al.  High-temperature degradation of InGaAsP/InP light emitting diodes , 1981 .

[22]  C. Zipfel,et al.  Planar, fast, reliable, single-heterojunction light-emitting diodes for optical links , 1980, The Bell System Technical Journal.

[23]  P. Landsberg Non‐Radiative Transitions in Semiconductors , 1970 .

[24]  Henry Kressel,et al.  Very high radiance edge-emitting LED , 1976 .

[25]  C. A. Burrus,et al.  Improved Two Wavelength Demultiplexing InGaAsP Photodetector , 1980, Integrated and Guided Wave Optics.

[26]  I. Griffith,et al.  GaInAsP/InP fast, high-radiance, 1.05-1.3-µm wavelength LED's with efficient lens coupling to small numerical aperture Silica optical fibers , 1979, IEEE Transactions on Electron Devices.

[27]  Howard M. Berg,et al.  A High Performance Connectorized LED Package for Fiber Optics , 1981 .

[28]  Y. G. Chai,et al.  InGaPAs-InP double-heterojunction high-radiance LED's , 1979, IEEE Transactions on Electron Devices.

[29]  K. Ikeda,et al.  Design parameters of frequency response of GaAs—(Ga,Al)As double heterostructure LED's for optical communications , 1977, IEEE Transactions on Electron Devices.

[30]  Y. G. Chai,et al.  Performance characteristics and extended lifetime data for InGaAsP/InP LED's , 1981, IEEE Electron Device Letters.

[31]  R. Lang,et al.  Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser‐threshold‐current temperature sensitivity , 1981 .

[32]  I. Hino,et al.  LED Pulse response analysis considering the distributed CR constant in the peripheral junction , 1979, IEEE Transactions on Electron Devices.

[33]  Y. Z. Liu,et al.  Effect of p-doping on carrier lifetime and threshold current density of 1.3 μm gainasp/inp lasers by liquid-phase epitaxy , 1980 .

[34]  High-efficiency long-lived GaAlAs LED's for fiber-optical communications , 1977, IEEE Transactions on Electron Devices.