High-voltage DSA-MOS transistor for electroluminescent display

MANY ATTEMPTS have been made to develop high voltage MOS transistors, employing either a DMOS structure”’, ion-implantation3, stacked gatr4 and a field plate’. This paper will describe a high-voltage 210s transistor with large tranceconductance and drain-source breakdown voltage that exceeds 8001’. The integration of low-voltage logic and highvoltage MOS elements on the same chip for electroluminescent display system6 will also be discussed.