论文信息 - DC To 6-GHz High-Gain Low-Noise GaInP/GaAs HBT Direct-Coupled Amplifiers with and without Emitter-Capacitive Peaking

DC To 6-GHz High-Gain Low-Noise GaInP/GaAs HBT Direct-Coupled Amplifiers with and without Emitter-Capacitive Peaking

High-gain shunt-series shunt-shunt wideband amplifiers with and without emitter-peaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB from DC to 6 GHz for a wideband amplifier without emitter-peaking capacitors. On the other hand, a wideband amplifier with emitter-peaking capacitors can increase the gain bandwidth up to 8 GHz at the cost of lower input/output return loss. Both circuits have similar power and noise performance. The noise figures of both designs are less than 2.8 dB for frequencies below 6 GHz. OP1dB and OIP3 are 7 and 20 dBm at 2 GHz, respectively. Total current consumption is 67 mA at 5-V supply voltage for both wideband amplifiers. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 67–69, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20377

Chinchun Meng | Shey-Shi Lu | Tse-Hung Wu

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