Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes

The dependence of device characteristics on cavity length is used to determine the injection efficiency, internal loss, and material gain of electrically injected AlGaN-cladding-free m-plane InGaN/GaN laser diodes. Estimates for the transparency carrier density are discussed in the context of recombination coefficients that have been reported for c-plane InGaN-based light-emitting devices.

[1]  S. Nakamura,et al.  InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .

[2]  E. O’Reilly,et al.  Theory of optical gain in ideal GaN heterostructure lasers , 1995 .

[3]  Akito Kuramata,et al.  Optical gain for wurtzite GaN with anisotropic strain in c plane , 1997 .

[4]  S. Nakamura,et al.  Strain-induced polarization in wurtzite III-nitride semipolar layers , 2006 .

[5]  W. Scheibenzuber,et al.  Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes , 2009 .

[6]  T. Uenoyama,et al.  Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers , 1996 .

[7]  Patrick Rinke,et al.  Determination of Internal Loss in Nitride Lasers from First Principles , 2010 .

[8]  T. Mukai,et al.  Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes. , 2007, Optics express.

[9]  Werner Wegscheider,et al.  Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers , 2003 .

[10]  Masao Ikeda,et al.  Recent progress in high-power blue-violet lasers , 2003 .

[11]  K. Delaney,et al.  Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes , 2011 .

[12]  S. Kamiyama,et al.  Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser , 1995 .

[13]  B. Hahn,et al.  A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes , 2009 .

[14]  Meng Zhang,et al.  Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes , 2009 .

[15]  Michael R. Krames,et al.  Auger recombination in InGaN measured by photoluminescence , 2007 .

[16]  Shun Lien Chuang,et al.  Theoretical prediction of GaN lasing and temperature sensitivity , 1995 .

[17]  James S. Speck,et al.  Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes , 2010 .

[18]  W. Chow,et al.  Theory of laser gain in group‐III nitrides , 1995 .

[19]  Aurelien J. F. David,et al.  Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes , 2010 .

[20]  L. Coldren,et al.  Diode Lasers and Photonic Integrated Circuits , 1995 .

[21]  Wolfgang G. Scheibenzuber,et al.  Recombination coefficients of GaN-based laser diodes , 2011 .

[22]  H. Ryu,et al.  Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics , 2008 .

[23]  T. Uenoyama,et al.  Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane , 1996 .

[24]  A. David,et al.  Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis , 2010 .