Radiation-hardening-by-design with circuit-level modeling of total ionizing dose effects in modern CMOS technologies

Physical model of total ionizing dose (TID) effects previously developed and successfully verified by authors was embedded to BSIM3v3 model implemented using Verilog-A language. This tool is fully compatible with standard SPICE simulators and allows taking into account the electrical bias conditions for each transistor during irradiation.

[1]  R. Lacoe.  Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology , 2008, IEEE Transactions on Nuclear Science.

[2]  B. Vermeire,et al.  Total dose radiation effect simulations on a high-precision data acquisition system , 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.

[3]  H.J. Barnaby,et al.  Total-Ionizing-Dose Effects in Modern CMOS Technologies , 2006, IEEE Transactions on Nuclear Science.

[4]  B. Vermeire,et al.  VHDL-AMS Modeling of Total Ionizing Dose Radiation Effects on CMOS Mixed Signal Circuits , 2007, IEEE Transactions on Nuclear Science.