Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs

In this work, we experimentally investigate the impact of measurement speed (μs-800 ps) on the characterization of reliability behaviors, hot carrier injection (HCI) and positive bias temerature instability (PBTI), for FDSOI nMOSFETs. The results show that, due to the severe self-heating effect (SHE) in the FDSOI nMOSFETs, the I-V measurement speed could significantly affects the characterization of threshold voltage Vth shift and saturation drive current Idsat degradation after HCI and PBTI stress. Due to the inevitable SHE in the transistor channel caused by the long measurement time, the Vth shift and Idsat degradation would be underestimated, leading to an overestimation of the HCI and PBTI lifetime. To precisely characterize the SHE-free reliability behaviors in FDSOI or FinFETs, a nanosecond-level measurement speed would be necessary to eliminate the SHE.

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