Low Damage Cryogenic Etching of Porous Organosilicate Low-k Materials Using SF6/O2/SiF4

[1]  P. Ho,et al.  Plasma processing of low-k dielectrics , 2013 .

[2]  Sebastian Engelmann,et al.  The effects of vacuum ultraviolet radiation on low-k dielectric films , 2012 .

[3]  Liping Zhang,et al.  Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film , 2012 .

[4]  Dolores C. Miller,et al.  Post Porosity Plasma Protection: Scaling of Efficiency with Porosity , 2012 .

[5]  Ehrenfried Zschech,et al.  Advanced Interconnects for ULSI Technology , 2012 .

[6]  G. Kaptay.  The Gibbs equation versus the Kelvin and the Gibbs-Thomson equations to describe nucleation and equilibrium of nano-materials. , 2012, Journal of nanoscience and nanotechnology.

[7]  S. Purushothaman,et al.  Application of the Protection/Deprotection Strategy to the Science of Porous Materials , 2011, Advanced materials.

[8]  P. Rice,et al.  Cryogenic plasmas for controlled processing of nanoporous materials. , 2011, Physical chemistry chemical physics : PCCP.

[9]  Ivan Ciofi,et al.  Capacitance measurements and k-value extractions of low-k films , 2010 .

[10]  M. Baklanov,et al.  The mechanism of low-k SiOCH film modification by oxygen atoms , 2010 .

[11]  Denis Shamiryan,et al.  Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening , 2010 .

[12]  S. Ozaki,et al.  Mechanism of porous low-k film damage induced by plasma etching radicals , 2010 .

[13]  M. Baklanov,et al.  Recombination of O and H Atoms on the Surface of Nanoporous Dielectrics , 2009, IEEE Transactions on Plasma Science.

[14]  Remi Dussart,et al.  In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process , 2009 .

[15]  Stephan A. Cohen,et al.  Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage , 2008 .

[16]  Guido Groeseneken,et al.  Influence of absorbed water components on SiOCH low-k reliability , 2008 .

[17]  Karen Maex,et al.  Reaction of trimethylchlorosilane in spin-on Silicalite-1 zeolite film. , 2008, Langmuir : the ACS journal of surfaces and colloids.

[18]  M. Boufnichel,et al.  The passivation layer formation in the cryo-etching plasma process , 2007 .

[19]  William S. Rabinovich,et al.  Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches , 2007 .

[20]  J. Marschall,et al.  An analytic model for atom diffusion and heterogeneous recombination in a porous medium , 2006 .

[21]  L. Favennec,et al.  Plasma-enhanced-chemical-vapor-deposited ultralow k for a postintegration porogen removal approach , 2006 .

[22]  S. Gates,et al.  Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature , 2005 .

[23]  E. R. Fisher,et al.  Creation of SiOF films with SiF4/O2 plasmas: From gas-surface interactions to film formation , 2004 .

[24]  H. Estrade-szwarckopf,et al.  Passivation mechanisms in cryogenic SF6/O2 etching process , 2004 .

[25]  A. Grill,et al.  Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization , 2003 .

[26]  Karen Maex,et al.  Low dielectric constant materials for microelectronics , 2003 .

[27]  J. Calvert,et al.  A new approach to ultralow-k dielectrics , 2003 .

[28]  Karen Maex,et al.  Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma , 2002 .

[29]  M. Baklanov,et al.  Non-destructive characterisation of porous low-k dielectric films , 2002 .

[30]  Po-Tsun Liu,et al.  Recovering Dielectric Loss of Low Dielectric Constant Organic Siloxane during the Photoresist Removal Process , 2002 .

[31]  Alfred Grill,et al.  Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition , 2001 .

[32]  C. A. Smolders,et al.  Critical points in the analysis of membrane pore structures by thermoporometry , 1992 .

[33]  Y. C. Kim,et al.  Recombination of oxygen, nitrogen, and hydrogen atoms on silica: kinetics and mechanism , 1991 .

[34]  P. Paniez,et al.  Resist degradation under plasma exposure: Synergistic effects of ion bombardment , 1991 .

[35]  Kazunori Tsujimoto,et al.  Low‐temperature reactive ion etching and microwave plasma etching of silicon , 1988 .

[36]  M. Brun,et al.  Changement d’état liquide [math] solide dans les milieux poreux - I. — Étude expérimentale de la solidification de l’eau et du benzène , 1973 .

[37]  Charles A. Johnson.  Generalization of the Gibbs-Thomson equation , 1965 .