论文信息 - A Fully Integrated Dual-Band Low Noise Amplifier for IEEE 802.11 and Hiper LAN Application

A Fully Integrated Dual-Band Low Noise Amplifier for IEEE 802.11 and Hiper LAN Application

A fully-integrated dual-band Low Noise Amplifier (LNA), which can be used for IEEE 802.11 and Hiper LAN applications, was investigated in this paper. The proposed LAN was implemented entirely pm a single chip based on a standard 0.18 ?m 1P6M CMOS process. It draws 13 mA current from a 1.5-V voltage supply and achieves power gains of 17 and 10 dB, noise figure of 3.7 and 4.2 dB at 2.4 and 5.3 GHz respectively.

Yeo Kiat Seng | Ma Jianguo | Do Manh Anh | Mow Shouxian

[1] Pietro Andreani,et al. Noise optimization of an inductively degenerated CMOS low noise amplifier , 2001 .

[2] A. Ziel. Noise in solid state devices and circuits , 1986 .

[3] Hossein Hashemi,et al. Concurrent multiband low-noise amplifiers-theory, design, and applications , 2002 .

[4] M. J. Deen,et al. Channel noise modeling of deep submicron MOSFETs , 2002 .

[5] T.H. Lee,et al. A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996, 1996 Symposium on VLSI Circuits. Digest of Technical Papers.

[6] Kiat Seng Yeo,et al. 1.5 V 1.8 GHz bandpass amplifier , 2000 .