论文信息 - Origin of defects responsible for charge transport in resistive random access memory based on hafnia - 字舞流文

Origin of defects responsible for charge transport in resistive random access memory based on hafnia

E. V. Ivanova | Novosibirsk | Russia. | V. Kaichev | R. A. O. Sciences | S. Petersburg | A. Saraev | T. Perevalov | D. Islamov | M. Zamoryanskaya | C. H. Cheng | Department of Electrical Engineering | V. Aliev | National Taiwan Normal University | Taiwan Roc | V. A. Gritsenkov | A. Ras | B. Raś | Ioffe Institute | Dept. of Mechatronic Technology | National Chiao Tung University | C. H. Cheng | D. R. Islamov | Department of Electronics Engineering