论文信息 - Avalanche multiplication in a compact bipolar transistor model for circuit simulation

Avalanche multiplication in a compact bipolar transistor model for circuit simulation

Weak avalanche in bipolar transistors can be accurately modeled by using the collector depletion capacitance. This model has the advantages of a relatively fast numerical evaluation and an easily extracted avalanche parameter. The model incorporates internal voltage drop and temperature dependence and can be implemented in any compact bipolar transistor model.<<ETX>>

H.C. de Graaff | W.J. Kloosterman

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