论文信息 - 150 Volt vertical channel GaAs FET

150 Volt vertical channel GaAs FET

A vertical channel buried junction gate GaAs FET structure is described. The fabrication process includes a novel technique of growing the second epitaxial layer at a high enough temperature using liquid phase epitaxy to activate the gate implant, which eliminates the need for a separate annealing step. Devices fabricated in this manner exhibit blocking voltages of up to 150V and blocking gains of over 10. Gate turn-off speeds are faster than 5 nsec.

B.J. Baliga | P.V. Gray | P.M. Campbell | R.S. Ehle

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