Hybrid silicon modulators

A number of active elements have been demonstrated using the hybrid silicon evanescent platform, including lasers, amplifiers and detectors. In this paper, two types of hybrid silicon modulators, fulfilling the building blocks in optical communication on this platform, will be presented. A hybrid silicon electroabsorption modulator, suitable for high speed interconnects, with 10 dB extinction ratio at -5 V and 16 GHz modulation bandwidth is demonstrated. In addition a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 V-mm voltage-length product, 150 nm optical bandwidth and a large signal modulation up to 10 Gb/s.

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