Unipolar spin diodes and transistors

Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.

[1]  Hideo Ohno,et al.  SPIN RELAXATION IN GAAS(110) QUANTUM WELLS , 1999 .

[2]  Lee,et al.  Theory of the bipolar spin switch. , 1996, Physical review. B, Condensed matter.

[3]  H. Grubin The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[4]  Kinder,et al.  Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. , 1995, Physical review letters.

[5]  Etienne,et al.  Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. , 1988, Physical review letters.

[6]  D. K. Young,et al.  Electrical spin injection in a ferromagnetic semiconductor heterostructure , 1999, Nature.

[7]  S. M. Sze Physics of semiconductor devices /2nd edition/ , 1981 .

[8]  W. Ossau,et al.  Magneto-optical properties of Zn 0.95 Mn 0.05 S e / Z n 0.76 Be 0.08 Mg 0.16 Se quantum wells and Zn 0.91 Mn 0.09 S e / Zn 0.972 Be 0.028 Se spin superlattices , 1999 .

[9]  Nitin Samarth,et al.  Room-Temperature Spin Memory in Two-Dimensional Electron Gases , 1997 .

[10]  H. Ohno,et al.  Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy , 1998 .

[11]  Spin diffusion in semiconductors , 1999, Physical review letters.

[12]  S. Datta,et al.  Electronic analog of the electro‐optic modulator , 1990 .

[13]  Y. Kawazoe,et al.  Resonance splitting effect and wave-vector filtering effect in magnetic superlattices , 1998 .

[14]  Mark Johnson Spin polarization of gold films via transported (invited) , 1994 .