Simulation of Threading Dislocation Images in X-ray Topographs of Silicon Carbide Homo-Epilayers
暂无分享,去创建一个
[1] M. Dudley,et al. Micropipes and the closure of axial screw dislocation cores in silicon carbide crystals , 2004 .
[2] M. Dudley,et al. THE CONTRAST OF INCLUSIONS COMPARED WITH THAT OF MICROPIPES IN BACK-REFLECTION SYNCHROTRON WHITE BEAM TOPOGRAPHS OF SIC , 2004 .
[3] K. Kojima,et al. Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography , 2004 .
[4] M. Dudley,et al. Surface-relaxation contributions to axial screw dislocation contrast in synchrotron white-beam X-ray topographs of SiC , 2002 .
[5] Marek Skowronski,et al. Dislocation conversion in 4H silicon carbide epitaxy , 2002 .
[6] M. Dudley,et al. Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals , 2001 .
[7] C. Carter,et al. Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image , 1999 .
[8] C. Carter,et al. Direct evidence of micropipe-related pure superscrew dislocations in SiC , 1999 .
[9] G. Schodder,et al. Some Elastic Constants of Silicon Carbide , 1965 .
[10] J. Landuyt,et al. Diffraction and imaging techniques in material science , 1978 .