Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

We report on high electric field stress measurements at room temperature on InAlN/AlN/GaN heterostructure field effect transistor structures. The degradation rate as a function of the average electron density in the GaN channel (as determined by gated Hall bar measurements for the particular gate biases used), has a minimum for electron densities around 1×1013 cm−2, and tends to follow the hot phonon lifetime dependence on electron density. The observations are consistent with the buildup of hot longitudinal optical phonons and their ultrafast decay at about the same electron density in the GaN channel. In part because they have negligible group velocity, the build up of these hot phonons causes local heating, unless they decay rapidly to longitudinal acoustic phonons, and this is likely to cause defect generation which is expected to be aggravated by existing defects. These findings call for modified approaches in modeling device degradation.

[1]  G. Meneghesso,et al.  Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs , 2008, IEEE Transactions on Electron Devices.

[2]  Xiang Gao,et al.  Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation , 2009, IEEE Electron Device Letters.

[3]  M.J. Uren,et al.  Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy , 2008, IEEE Transactions on Electron Devices.

[4]  V. Tilak,et al.  Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation , 2003, IEEE Electron Device Letters.

[5]  J. Kuzmik,et al.  Power electronics on InAlN/(In)GaN: Prospect for a record performance , 2001, IEEE Electron Device Letters.

[6]  Xing Li,et al.  Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures , 2010 .

[7]  R. Grundbacher,et al.  Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting , 2004, Microelectron. Reliab..

[8]  Lester F. Eastman,et al.  Hot-phonon-induced velocity saturation in GaN , 2004 .

[9]  Jungwoo Joh,et al.  GaN HEMT reliability , 2009, Microelectron. Reliab..

[10]  Brian K. Ridley,et al.  Phonon-plasmon coupled-mode lifetime in semiconductors , 2008 .

[11]  Lester F. Eastman,et al.  Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis , 2003 .

[12]  Christophe Gaquiere,et al.  Status of the Emerging InAlN/GaN Power HEMT Technology , 2008 .

[13]  Hadis Morkoç,et al.  Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels , 2009 .

[14]  Eric Feltin,et al.  Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23) , 2008 .

[15]  D. Pavlidis,et al.  Investigation of the impact of Al mole-fraction on the consequences of RF stress on Al/sub x/Ga/sub 1-x/N/GaN MODFETs , 2005, IEEE Transactions on Electron Devices.

[16]  Lester F. Eastman,et al.  High-field effects in silicon nitride passivated GaN MODFETs , 2003 .

[17]  B. Ridley,et al.  The LO phonon lifetime in GaN , 1996 .

[18]  Michael S. Shur,et al.  Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors , 2001 .

[19]  A. Matulionis,et al.  Hot phonons in GaN channels for HEMTs , 2006 .

[20]  Paul Saunier,et al.  Effects of AlGaN/GaN HEMT structure on RF reliability , 2005 .

[21]  G. P. Srivastava.  Origin of the hot phonon effect in group-III nitrides , 2008 .

[22]  G. Meneghesso,et al.  Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs , 2006, IEEE Transactions on Electron Devices.