Mapping of the localized interface and surface states of InGaAs lattice matched to Fe‐doped InP by infrared spectroscopy

Infrared absorption and photocurrent measurements have been applied to study the photoresponse below the band gap of indium gallium arsenide (In0.53Ga0.47As) grown lattice matched to Fe‐doped semi‐insulating indium phosphide (InP) substrates by various epitaxial growth techniques, including molecular beam epitaxy, liquid phase epitaxy, and metalorganic chemical vapor deposition. It is found that Fe at the InGaAs/InP interface is responsible for exciton‐like and polarization sensitive absorption peaks. Both electron and hole emission into the conduction and valence bands, respectively, were observed, and a deep Fe level was identified 0.37 eV below the conduction band edge of bulk Fe:InGaAs. Lowering of the local crystal symmetry due to the interface electric field is proposed to be the mechanism that describes the dipole‐allowed interband absorption of 3d transition metal impurities in narrow band gap III‐V compounds like the Fe2+:InGaAs used in this study. The ambiguity in distinguishing InGaAs quantum w...

[1]  David J. Frank,et al.  Empirical fit to band discontinuities and barrier heights in III–V alloy systems , 1992 .

[2]  Eli Yablonovitch,et al.  Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces , 1992 .

[3]  Gerard Mourou,et al.  Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures , 1991 .

[4]  Thonke,et al.  Charge-transfer transitions of Fe ions in InP. , 1991, Physical review. B, Condensed matter.

[5]  Darling.  Defect-state occupation, Fermi-level pinning, and illumination effects on free semiconductor surfaces. , 1991, Physical review. B, Condensed matter.

[6]  G. Guillot,et al.  Identification of the Fe acceptor level in Ga0.47In0.53As , 1990 .

[7]  S. Laval,et al.  Interfacial traps in Ga0.47In0.53As/InP heterostructures , 1990 .

[8]  D. Stiévenard,et al.  Native defects in gallium arsenide , 1988 .

[9]  Clifton G. Fonstad,et al.  Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak‐to‐valley current ratios of 30 at room temperature , 1988 .

[10]  S. Loualiche,et al.  Residual defect center in GaInAs/InP films grown by molecular beam epitaxy , 1987 .

[11]  L. C. West,et al.  First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well , 1985 .

[12]  A. Katsui,et al.  Redistribution of Fe in thermally annealed semi‐insulating InP(Fe): Determination of Fe diffusion coefficient in InP , 1984 .

[13]  R. Wilson,et al.  Redistribution of Fe in InP during liquid phase epitaxy , 1981 .

[14]  S. Pantelides.  Deep Centers in Semiconductors , 1986 .

[15]  M. Jaroš.  Deep Levels in Semiconductors , 1982 .

[16]  M. Daw,et al.  Relation between the common anion rule and the defect model of Schottky barrier formation , 1981 .